Low-activity radiation detector

Photo: archive of inventors/Institute of electrical engineering SAS

New large area detector of low-activity radiation expands the application possibilities, especially in the case of lower quality of the semiconductor substrate. At the same time, the construction allows a more accurate measurement result, while also reducing the amount of control electronics. Significant are financial savings during the manufacture and also during the use.

Competitive advantage

  • possibility to use lower quality semiconductor materials (CdTe, GaAs, CdZnTe, SiC, InP, etc.);
  • more precise measurement result (unaffected by defective areas);
  • simpler construction;
  • higher production yield;
  • the result is obtained directly, without the need to correct the measured values;
  • significant financial savings during operation;
  • reduction of demands on the amount of control electronics for reading the detector;
  • possibility to connect to only one reading unit (instead of a large number);
  • each produced large area detector is functional (in case of defects in the material, the total detection area will only be reduced by max. 10 – 30% ).

Use of technology

  • in nuclear energetics (spectrometry, dosimetry);
  • wherever there are sources of ionizing radiation of natural or artificial nature;
  • in space applications.

For download

Protection of intellectual property

  • Patent application: (WO)
  • Utility model application: (SK)
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