Vertical GaN transistor with insulating channel and method of its preparation

A new concept of unipolar vertical transistor with insulating channel, which works in the enhancement mode and achieves large current values without the need of parallel connection of multiple channels.

Competitive advantage

• simplified preparation of massive power vertical transistors, without the need of nano-shaping and only with minimal parasitic effects;
• assumed cost reduction of electronic devices containing this component;
• assumed reduction of cooling requirements for electronic devices containing this component.

Use of technology

• in highly efficient converters of electric power;
• in generation and distribution of electric power;
• in charging and in propulsion units of electric cars.

Protection of intellectual property

• Patent applications: (SK) (EP)